| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,227 pcs
|
5227 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request | |
|
295 pcs
|
295 pcs | On Request | 1 | On Request | On Request | 0820+ | On Request | On Request |
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| AEC Qualified | |
| Automotive Grade | |
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| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
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| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The MRF7S21170HSR3 from Freescale Semiconductor is a high-performance RF FET belonging to the LDMOS technology family. This component is designed for RF applications, specifically operating in the S-band with a frequency of 2.17GHz.
Key electrical characteristics include an output power of 50W and a gain of 16dB. The device is rated for a test voltage of 28V and a maximum rated voltage of 65V, with a test current of 1.4A. It is supplied in the NI-880S package and is available on tape and reel.
This RF FET is suitable for various RF power amplification designs where reliable performance and specific frequency operation are critical. Its specifications make it a component choice for applications requiring robust RF signal handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MRF7S21170HSR3 has an output power of 50W.
This RF FET operates at a frequency of 2.17GHz.
The gain of the MRF7S21170HSR3 is 16dB.
The MRF7S21170HSR3 is rated for 65V.
The MRF7S21170HSR3 is supplied in the NI-880S package.