| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,414 pcs
|
1414 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Frequency | |
| Gain | |
| Mounting Type | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The MRF7S21170HR3 from NXP Semiconductors is a lateral N-channel enhancement-mode LDMOS RF Power MOSFET. It is specifically designed for CDMA base station applications operating within the 2110 to 2170 MHz frequency range, and is also suitable for multicarrier amplifier applications in Class AB and Class C modes for PCN/PCS/cellular radio and WLL applications.
This device delivers a typical single-carrier W-CDMA performance of 50 Watts average output power at 28 Volts VDD and 1400 mA quiescent current, with a power gain of 16 dB and 31% drain efficiency at 2167.5 MHz. It is capable of handling 5:1 VSWR and can achieve an output power of approximately 170 Watts CW at the 1 dB compression point.
The MRF7S21170HR3 features internal matching for ease of use, integrated ESD protection, and an optimized design for Doherty applications. It is supplied in the NI-880H-2L package, which is a SOT-957A type, suitable for chassis mounting. The R3 suffix indicates it is provided in tape and reel packaging, with 250 units per 56 mm tape width on a 13-inch reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical single-carrier W-CDMA performance is 50 Watts average output power.
The device is designed for frequencies from 2110 to 2170 MHz.
The typical power gain is 16 dB at 2167.5 MHz.
The operating voltage is typically 28 Volts, with a maximum rating of 32 Vdc.
It is supplied in the NI-880H-2L package, which is a SOT-957A type.
The mounting type is chassis mount.