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500 pcs
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500 pcs | On Request | 1 | On Request | On Request | 0914+ | On Request | On Request |
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The MRF7S19100NR1 from Freescale Semiconductor is an RF MOSFET utilizing LDMOS technology. It is designed for operation in the L-band frequency range, specifically between 1.93GHz and 1.99GHz.
This component delivers an output power of 29W with a gain of 17.5dB. It is rated for a voltage of 65V and tested at 28V with a test current of 1A. The device is housed in a TO-270AB package, suitable for surface mounting.
Key electrical characteristics include its LDMOS technology, 29W output power, and 17.5dB gain. The operating frequency range is 1.93GHz to 1.99GHz, with rated voltage at 65V and test voltage at 28V.
The MRF7S19100NR1 is supplied in a TO-270 WB-4 package, designed for surface mount applications. Its specifications make it suitable for various RF power amplification tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MRF7S19100NR1 has an output power of 29W.
The gain of the MRF7S19100NR1 is 17.5dB.
The MRF7S19100NR1 operates in the frequency range of 1.93GHz to 1.99GHz.
The rated voltage for the MRF7S19100NR1 is 65V.
The MRF7S19100NR1 is supplied in a TO-270AB package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.