| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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522 pcs
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522 pcs | On Request | 1 | On Request | On Request | 1244+ | On Request | On Request | |
|
30 pcs
|
30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This MRF7S19100NBR1 from Freescale Semiconductor is an RF transistor designed for L-Band applications. It employs LDMOS technology, offering a power dissipation of 29W and a current rating of 1A.
The transistor operates at a voltage of 28V and covers a frequency range from 1.93GHz to 1.99GHz, with a typical gain of 17.5dB. It is housed in a TO-272BB package, with the supplier specifying a TO-272 WB-4 variant.
This component is suitable for various RF power amplifier designs where specific frequency and power characteristics are required. Its N-channel configuration and LDMOS technology make it a robust choice for demanding RF applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 28V.
The frequency range is 1.93GHz to 1.99GHz.
It is supplied in a TO-272BB package.
The power dissipation is 29W.
The gain is 17.5dB.