| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,025 pcs
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2025 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The Freescale Semiconductor MRF7S19080HSR3 is an N-Channel LDMOS RF transistor optimized for L-Band frequencies up to 1.99GHz. This device delivers a high output power of 36W with a gain of 18dB, operating efficiently at a test voltage of 28V and a test current of 1.2A. Its maximum rated voltage is 65V.
Designed with LDMOS technology, it offers stable operation across a wide frequency range, high ruggedness, and good efficiency. The transistor is packaged in a TO-270 wide body 4-lead (TO-270 WB-4) case, suitable for surface mount applications and providing efficient heat dissipation for reliable performance in power amplifier circuits.
This component is ideal for RF and microwave power amplifiers, base stations for wireless communications, and industrial or scientific transmitters. Its surface mount form factor facilitates automated PCB assembly. Note that this product is obsolete, indicating end-of-life with no further manufacturer support, making it suitable for legacy or repair applications.
Key specifications include LDMOS technology, up to 1.99GHz frequency range, 36W output power, 18dB gain, 28V test voltage, and 1.2A test current. It is supplied in a TO-270AB package.
The MRF7S19080HSR3 provides up to 36W of output power.
The typical gain for the MRF7S19080HSR3 is 18dB.
This RF transistor operates at frequencies up to 1.99GHz.
The MRF7S19080HSR3 is tested at 28V.
The MRF7S19080HSR3 is supplied in a TO-270 WB-4 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is Level 1 Unlimited.