MRF7S19080HSR3

The MRF7S19080HSR3 from NXP Semiconductors is a lateral N-channel enhancement-mode MOSFET specifically designed for RF power applications. It is suitable for CDMA and multicarrier amplifier applications, particularly in Class AB and Class C operation for TD-SCDMA and PCN/PCS/cellular radio.

This device is characterized for CDMA base station applications within the 1930 to 1990 MHz frequency range. It delivers a typical single-carrier W-CDMA performance with 24 Watts average output power and 18 dB power gain. The MOSFET is capable of handling 10:1 VSWR at 80 Watts CW output power and features an output power at 1 dB compression point of approximately 80 Watts CW.

Key features include internal matching for ease of use, integrated ESD protection, and a greater negative gate-source voltage range for improved Class C operation. It is also designed for digital predistortion error correction systems. The MRF7S19080HSR3 comes in a NI-780S package, suitable for chassis mounting, and is supplied in tape and reel packaging.

Maximum ratings include a Drain-Source Voltage of 65 Vdc and a Gate-Source Voltage of 10 Vdc. The operating voltage is specified at 32 Vdc. Thermal characteristics include a junction-to-case thermal resistance of 0.60 °C/W. The device is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.