| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,005 pcs
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2005 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The NXP Semiconductors MRF6VP41KHR7 is a high-power RF MOSFET designed for pulse and CW wideband applications. It operates with a drain-source voltage up to 110V and a gate-source voltage up to 10V.
This device features LDMOS technology and is suitable for industrial, medical, and scientific applications. It is characterized by a typical power gain of 20 dB and a drain efficiency of 64% at 450 MHz. The MOSFET is capable of handling 10:1 VSWR at 50 Vdc, 450 MHz, and 1000 Watts Peak Power.
The MRF6VP41KHR7 is supplied in a NI-1230 package, designed for chassis mounting. It supports CW operation with adequate cooling and includes integrated ESD protection. The device is also qualified for operation up to 50 VDD.
Key electrical characteristics include a maximum total device dissipation of 1333W at 25°C (CW only) and a typical output power of 1000 Watts Peak (200 W Avg.) under specific test conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical pulse performance at 450 MHz shows an output power of 1000 Watts Peak (200 W Avg.).
The operating voltage is 50 Vdc.
The device is designed for applications with frequencies up to 500 MHz.
The MRF6VP41KHR7 is supplied in a NI-1230 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.