| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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23 pcs
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23 pcs | On Request | 1 | On Request | On Request | 928 | On Request | On Request |
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| Tape & Reel | |
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| Voltage |
The MRF6VP41KHR7 is a high-power RF MOSFET from Freescale Semiconductor, designed for pulse and CW wideband applications. Operating at frequencies up to 500 MHz, this N-Channel LDMOS device is suitable for industrial, medical, and scientific applications.
Key electrical specifications include a typical power output of 1000 Watts peak (200W average) at 450 MHz with a 50V drain-source voltage. It provides a power gain of 20 dB and a drain efficiency of 64% under typical pulse conditions. The device is qualified for operation up to 50V VDD and can handle a 10:1 VSWR at 50 Vdc, 450 MHz, 1000 Watts Peak Power.
Packaged in a NI-1230 case, the MRF6VP41KHR7 is designed for chassis mounting. It features integrated ESD protection and is suitable for push-pull operation. The device is available on tape and reel, with the R6 suffix indicating 150 units per 56 mm, 13-inch reel.
Thermal characteristics include a junction-to-case thermal impedance of 0.03 °C/W for pulsed operation and 0.15 °C/W for CW operation. The maximum operating junction temperature is 225°C, with a case operating temperature limit of 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MRF6VP41KHR7 has a typical pulse performance power output of 1000 Watts Peak (200 W Avg.) at 450 MHz.
The MRF6VP41KHR7 is qualified up to a maximum of 50 VDD operation.
The MRF6VP41KHR7 is designed for applications with frequencies up to 500 MHz, with typical performance specified at 450 MHz.
The typical power gain for the MRF6VP41KHR7 at 450 MHz is 20 dB.
The MRF6VP41KHR7 is supplied in the NI-1230 package.
The MRF6VP41KHR7 is designed for chassis mount.
The maximum operating junction temperature (TJ) for the MRF6VP41KHR7 is 225°C.