| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,010 pcs
|
2010 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Duty Cycle | |
| Frequency | |
| Gain | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| VSWR | |
| Voltage |
The MRF6VP121KHR6 is a high-power RF MOSFET manufactured by NXP Semiconductors, designed for demanding applications operating within the 965 to 1215 MHz frequency range. This N-Channel enhancement-mode lateral MOSFET is suitable for pulsed applications, delivering up to 1000 Watts of peak power and 100 Watts average power.
Key electrical characteristics include a typical power gain of 20 dB and a drain efficiency of 56%. The device is qualified for operation up to 50 Vdd and is capable of handling a 5:1 VSWR. It features internal matching for ease of use and is designed for push-pull operation, offering a greater negative gate-source voltage range for improved Class C operation.
Packaged in a NI-1230 case, this component is designed for chassis mounting. The MRF6VP121KHR6 also includes integrated ESD protection and is RoHS compliant. It is supplied in tape and reel packaging for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 110 Vdc.
This RF MOSFET operates in the frequency range of 965 to 1215 MHz.
The MRF6VP121KHR6 has a peak power output of 1000 Watts.
The typical power gain is 20 dB.
The MRF6VP121KHR6 is chassis mounted.
The package type is NI-1230.