| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,004 pcs
|
2004 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| ESD Protection | |
| Frequency | |
| Gain | |
| Mounting Type | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The NXP Semiconductors MRF6V2150NBR5 is a lateral N-channel enhancement-mode MOSFET designed for RF power applications. It is suitable for CW large-signal output and driver applications with frequencies up to 450 MHz, and is unmatched for use in industrial, medical, and scientific applications.
Key electrical characteristics include a typical output power of 150 Watts at 220 MHz with a 50 Vdc drain-source voltage and 450 mA quiescent current. The device provides a power gain of 25 dB and a drain efficiency of 68.3%. It is qualified for operation up to 50 Vdc and is capable of handling a 10:1 VSWR at 50 Vdc, 220 MHz, and 150 Watts CW output power.
This RF MOSFET features integrated ESD protection and is housed in a 225°C capable plastic package. The TO-272-4 (TO-272 WB-4) package is suitable for chassis mounting. The device is supplied in tape and reel packaging.
Maximum ratings include a drain-source voltage of 110 Vdc and a gate-source voltage of 12 Vdc. The operating junction temperature is rated up to 225°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical output power is 150 Watts at 220 MHz.
The typical power gain is 25 dB at 220 MHz.
The typical drain efficiency is 68.3% at 220 MHz.
The operating junction temperature is rated up to 225°C.
The package type is TO-272-4.
It is chassis mounted.