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MRF6V2010NR1 The NXP Semiconductors MRF6V2010NR1 is an RF Power MOSFET designed for large-signal output and driver applications up to 450 MHz. It features a 110V drain-source voltage and 10W power output.
Mfr Part #:

MRF6V2010NR1

Available from 3 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The NXP Semiconductors MRF6V2010NR1 is an RF Power MOSFET designed for large-signal output and driver applications up to 450 MHz. It features a 110V drain-source voltage and 10W power output.
✓ Total Stock: 4,147 pcs
$ Price Range: $0.99

MRF6V2010NR1 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Flip Electronics ✓
Non-Authorised Inventory information
2,690 pcs
On Request
2690 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,357 pcs
On Request
1357 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
100 pcs
On Request
100 pcs On Request 1 On Request On Request 21+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

MRF6V2010NR1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Frequency
Gain
Mounting Type
Power
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
VSWR
Voltage
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MRF6V2010NR1 Description

Short technical summary and product information.

The NXP Semiconductors MRF6V2010NR1 is a lateral N-channel enhancement-mode MOSFET designed for RF power applications. It is suitable for CW large-signal output and driver applications with frequencies up to 450 MHz.

 

Key electrical characteristics include a drain-source voltage of 110V, a gate-source voltage of 10V, and a typical power output of 10W at 220 MHz. The device offers a typical power gain of 23.9 dB and a drain efficiency of 62% under specific test conditions.

 

This MOSFET is characterized with series equivalent large-signal impedance parameters and is qualified for up to 50V DD operation. It features integrated ESD protection and is capable of operating at 225°C junction temperatures.

 

The MRF6V2010NR1 is housed in a TO-270-2 plastic package and is designed for surface mounting. Its robust design makes it suitable for industrial, medical, and scientific applications.

MRF6V2010NR1 Quick Information

Product Type: RF Power MOSFET
Canonical Name: MRF6V2010NR1 RF Power MOSFET
Subcategory: RF Power MOSFET

MRF6V2010NR1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MRF6V2010NR1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MRF6V2010NR1 Features

  • Designed for frequencies up to 450 MHz.
  • Typical CW performance at 10W output power.
  • Capable of handling 10:1 VSWR.
  • Integrated ESD protection.
  • 225°C capable plastic package.

MRF6V2010NR1 Applications

  • Suitable for CW large-signal output.
  • Used in driver applications.
  • Ideal for industrial applications.
  • Suitable for medical applications.
  • Designed for scientific applications.

MRF6V2010NR1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the MRF6V2010NR1?

The maximum drain-source voltage is 110 Vdc.

What frequency range does the MRF6V2010NR1 support?

It supports frequencies up to 220 MHz.

What package does the MRF6V2010NR1 come in?

It comes in a TO-270AA package.

What is the maximum operating junction temperature?

The maximum junction temperature is 225°C.

Is the MRF6V2010NR1 RoHS compliant?

It is RoHS3 compliant.

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