| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,006 pcs
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2006 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The MRF6V2010NBR5 from NXP Semiconductors is a lateral N-channel enhancement-mode MOSFET designed for RF power applications. It is suitable for CW large-signal output and driver applications with frequencies up to 450 MHz.
This device is characterized for performance at 220 MHz, delivering a typical output power of 10W with a power gain of 23.9 dB and a drain efficiency of 62% at 50Vdc drain-source voltage and 30mA quiescent current. It is capable of handling a 10:1 VSWR at 50 Vdc, 220 MHz, and 10 W CW output power.
The MRF6V2010NBR5 features integrated ESD protection and is qualified for up to 50 V DD operation. The component is housed in a TO-272-2 plastic package, which is capable of operating at 225°C junction temperature. The exposed backside of the package serves as the source terminal.
This MOSFET is designed for use in industrial, medical, and scientific applications. Its robust design and performance characteristics make it a reliable choice for demanding RF power circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical output power of the MRF6V2010NBR5 at 220 MHz is 10W.
The typical operating voltage for this RF Power MOSFET is 50 V.
The MRF6V2010NBR5 is supplied in a TO-272-2 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.