MRF6V12500HR5

The MRF6V12500HR5 from NXP Semiconductors is a high-power RF transistor utilizing LDMOS technology. It is designed for applications operating in the frequency range of 960 to 1215 MHz, making it suitable for systems such as distance measuring equipment (DME), transponders, and secondary radars for air traffic control. This device is particularly well-suited for pulse applications, including Mode S ELM.

Key electrical specifications include a power output of 500W, a typical gain of 19.7dB, and an operating voltage of 50V. The quiescent current is specified at 200 mA. The transistor is internally matched for ease of use and features integrated ESD protection. It is qualified for up to a maximum of 50 VDD operation and offers a greater negative gate-source voltage range for improved Class C operation.

This RF transistor is housed in a SOT-957A package, identified by the supplier package code NI-780H-2L. It is designed for chassis mounting, facilitating integration into larger systems. The maximum ratings include a drain-source voltage of 110 Vdc and a gate-source voltage range of -6.0 Vdc to +10 Vdc. The operating junction temperature can reach up to 225°C, with a case operating temperature of 150°C. Thermal impedance from junction to case is 0.044 °C/W.