| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
450 pcs
|
450 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Current Rating (Amps) | |
| Frequency | |
| Gain | |
| Mounting Type | |
| Supplier Device Package | |
| Technology | |
| Voltage |
This MRF6V12500GSR5 is a lateral N-channel RF power transistor manufactured by NXP Semiconductors. Designed for pulsed operation, it employs LDMOS technology for efficient power amplification.
The transistor operates with a voltage rating of 50V and handles a current of 200 mA. Its frequency range spans from 960MHz to 1.215GHz, making it suitable for various RF applications. The component exhibits a gain of 19.7dB.
Packaged in a NI-780GS-2L case, the MRF6V12500GSR5 is designed for surface mounting. It is rated with a Moisture Sensitivity Level (MSL) of 1, indicating unlimited shelf life under standard conditions. The RoHS status is compliant with RoHS3 standards.
This RF power transistor is a component within the Transistors - FETs, MOSFETs - RF category, offering specific performance characteristics for demanding RF power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 50V.
The frequency range is 960MHz to 1.215GHz.
The MRF6V12500GSR5 is supplied in the NI-780GS-2L package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.