| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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200 pcs
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200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MRF6V12250HSR5 from NXP Semiconductors is a high-performance RF FET designed for demanding applications. This LDMOS transistor operates at frequencies up to 1.03GHz with a voltage rating of 50V and a power handling capability of 275W. It features a gain of 20.3dB and a current rating of 100 mA.
The device is designed for chassis mount installations and comes in a NI-780S package, also known as the Supplier Device Package. Its robust construction and electrical characteristics make it suitable for various RF power amplification circuits.
Compliance information indicates RoHS3 compliance, Moisture Sensitivity Level 1, and REACH unaffected status. These attributes are based on available database information and should be verified for specific applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 50V.
The operating frequency is 1.03GHz.
The MRF6V12250HSR5 is supplied in the NI-780S package.
The power rating is 275W.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.