| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,026 pcs
|
2026 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Frequency | |
| Gain | |
| Mounting Type | |
| Power | |
| Supplier Device Package | |
| Technology | |
| Voltage |
The MRF6V12250HR5 from NXP Semiconductors is a high-performance RF Power Field-Effect Transistor (FET) utilizing LDMOS technology. This device is engineered for demanding RF applications, offering a robust power output of 275W at a frequency of 1.03GHz.
Key electrical characteristics include an operating voltage of 50V and a current drain of 100 mA. The transistor exhibits a typical gain of 20.3dB, making it suitable for power amplification stages in RF systems.
Packaged in a SOT-957A form factor, the MRF6V12250HR5 is designed for chassis mounting, facilitating efficient thermal management in high-power applications. Its supplier device package is identified as NI-780H-2L.
This RF FET is compliant with RoHS3 standards and has an MSL rating of 1, indicating unlimited shelf life under standard conditions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MRF6V12250HR5 operates at 50V.
The MRF6V12250HR5 is supplied in a SOT-957A package.
The MRF6V12250HR5 is RoHS3 Compliant.
The MRF6V12250HR5 has an MSL of 1 Unlimited.