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MRF6S9060NBR1 The Freescale Semiconductor MRF6S9060NBR1 is an RF Power Field Effect Transistor. It operates with a 28V drain-source voltage and a 450mA current rating.
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MRF6S9060NBR1

Available from 1 distributors
Mfr Name: Freescale Semiconductor
Freescale Semiconductor
The Freescale Semiconductor MRF6S9060NBR1 is an RF Power Field Effect Transistor. It operates with a 28V drain-source voltage and a 450mA current rating.
✓ Total Stock: 14 pcs
$ Price Range: $0.99

MRF6S9060NBR1 Available from 1 distributor

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✓ Non-Authorised
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Speed Components Ltd ✓
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14 pcs
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14 pcs On Request 1 On Request On Request On Request On Request On Request
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MRF6S9060NBR1 Specifications Quick View

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MRF6S9060NBR1 Description

Short technical summary and product information.

The MRF6S9060NBR1 is an RF Power Field Effect Transistor manufactured by Freescale Semiconductor. This component is designed for RF applications and features a drain-source voltage of 28V and a current rating of 450mA.

 

Key electrical specifications include an operating frequency of 880MHz and a maximum power dissipation of 227W. The transistor has a minimum breakdown voltage of 68V. It is housed in a TO-270-2 package.

 

The maximum operating temperature for this device is 150°C. It has 2 terminals. This transistor is suitable for various RF power amplification and switching applications where high frequency and power handling are required.

MRF6S9060NBR1 Quick Information

Product Type: RF Power Field Effect Transistor
Series: MRF6S
Canonical Name: RF Power Field Effect Transistor
Subcategory: RF Power Field Effect Transistor

MRF6S9060NBR1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MRF6S9060NBR1 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MRF6S9060NBR1 Features

  • RF Power Field Effect Transistor.
  • 28V drain-source voltage rating.
  • 450mA current rating.
  • 880MHz operating frequency.
  • TO-270-2 package.

MRF6S9060NBR1 Applications

  • RF power amplifier for 880MHz applications.
  • Suitable for wireless base station transmitters.
  • Used in industrial RF heating systems.
  • Ideal for broadcast transmitter output stages.
  • Designed for 28V RF power amplification.

MRF6S9060NBR1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the MRF6S9060NBR1?

The drain-source voltage is 28V.

What is the minimum breakdown voltage?

The minimum breakdown voltage is 68V.

What is the current rating of this RF transistor?

The current rating is 450mA.

At what frequency does the MRF6S9060NBR1 operate?

The operating frequency is 880MHz.

What is the maximum power dissipation?

The maximum power dissipation is 227W.

What is the maximum operating temperature?

The maximum operating temperature is 150°C.

What package type is the MRF6S9060NBR1 in?

It is in a TO-270-2 package.

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