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MRF6S9045NBR1 The Freescale Semiconductor MRF6S9045NBR1 is an RF FET, MOSFET designed for broadband applications up to 1000 MHz. It features LDMOS technology and a chassis mount package.
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MRF6S9045NBR1

Available from 1 distributors
Mfr Name: Freescale Semiconductor
Freescale Semiconductor
The Freescale Semiconductor MRF6S9045NBR1 is an RF FET, MOSFET designed for broadband applications up to 1000 MHz. It features LDMOS technology and a chassis mount package.
✓ Total Stock: 10 pcs
$ Price Range: $0.99

MRF6S9045NBR1 Available from 1 distributor

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✓ Non-Authorised
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Speed Components Ltd ✓
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10 pcs
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MRF6S9045NBR1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Current Rating (Amps)
Frequency
Gain
Mounting Type
Power
Rated Voltage
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Tape & Reel
Technology
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MRF6S9045NBR1 Description

Short technical summary and product information.

The Freescale Semiconductor MRF6S9045NBR1 is a high-frequency RF Power Field Effect Transistor utilizing N-Channel Enhancement-Mode Lateral MOSFET technology. Designed for broadband commercial and industrial applications, it operates at frequencies up to 1000 MHz.

 

This device is ideal for large-signal, common-source amplifier applications in 28-volt base station equipment. Key electrical specifications include a typical power gain of 22.7 dB at 880 MHz for N-CDMA applications and 20 dB for GSM applications. It offers a drain efficiency of 32% for N-CDMA and up to 68% for GSM.

 

The MRF6S9045NBR1 is characterized by its high gain and broadband performance. It is capable of handling 5:1 VSWR at 28 Vdc, 880 MHz, and 45 Watts CW output power. The transistor is housed in a SOT-957A package and features a chassis mount type, making it suitable for robust integration into various RF systems.

 

Additional features include integrated ESD protection and a 225°C capable plastic package. The 'N' suffix indicates lead-free terminations, and it is RoHS compliant. The part is available in tape and reel options for TO-270-2 and TO-272-2 packages.

MRF6S9045NBR1 Quick Information

Product Type: RF FET, MOSFET
Canonical Name: MRF6S9045NBR1 RF Power Field Effect Transistor
Subcategory: MOSFETs

MRF6S9045NBR1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MRF6S9045NBR1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MRF6S9045NBR1 Features

  • LDMOS technology for RF applications.
  • Operates at frequencies up to 1GHz.
  • High power gain up to 22.7dB.
  • Suitable for 28V base station equipment.
  • Chassis mountable SOT-957A package.

MRF6S9045NBR1 Applications

  • Ideal for broadband amplifier circuits.
  • Used in 28V base station systems.
  • Suitable for N-CDMA applications.
  • Designed for GSM and GSM EDGE.

MRF6S9045NBR1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the typical power gain for the MRF6S9045NBR1?

The typical power gain is 22.7 dB for N-CDMA applications at 880 MHz and 20 dB for GSM applications.

What is the output power of the MRF6S9045NBR1?

The typical output power is 10 Watts Avg. for N-CDMA, 16 Watts Avg. for GSM EDGE, and 45 Watts for GSM.

What is the operating frequency range for this RF MOSFET?

This RF MOSFET is designed for frequencies up to 1 GHz.

What type of package is the MRF6S9045NBR1 in?

The MRF6S9045NBR1 is available in a SOT-957A package.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 225°C.

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