MRF6S21100NR1 The Freescale Semiconductor MRF6S21100NR1 is an RF Power Field Effect Transistor designed for W-CDMA base station applications. It operates at frequencies from 2110 to 2170 MHz.
Mfr Part #:

MRF6S21100NR1

Available from 1 distributors
Mfr Name: Freescale Semiconductor
Freescale Semiconductor
The Freescale Semiconductor MRF6S21100NR1 is an RF Power Field Effect Transistor designed for W-CDMA base station applications. It operates at frequencies from 2110 to 2170 MHz.
Total Stock: 3,566 pcs
$ Price Range: $0.99

MRF6S21100NR1 Available from 1 distributor

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MRF6S21100NR1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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MRF6S21100NR1 Description

Short technical summary and product information.

The Freescale Semiconductor MRF6S21100NR1 is an N-Channel enhancement-mode lateral MOSFET designed for RF power applications. It is suitable for TDMA, CDMA, and multicarrier amplifier applications, specifically for Class AB amplifiers in PCN-PCS, cellular radio, WLL, and TD-SCDMA systems.

 

This RF MOSFET operates within a frequency range of 2.11GHz to 2.17GHz, with a voltage rating of 28V and a continuous current of 1.05A. It delivers a power output of 23W and features a gain of 14.5dB. The technology used is LDMOS, known for its high-frequency performance.

 

The MRF6S21100NR1 comes in a TO-270AB package, designed for surface mounting. Its compact dimensions and surface mount capability make it suitable for integration into various RF circuit designs where space is a consideration.

 

This component is classified under Transistors - FETs, MOSFETs - RF. It is designed for applications requiring robust RF power amplification within the specified frequency bands.

MRF6S21100NR1 Quick Information

Product Type: RF Power Field Effect Transistor
Canonical Name: MRF6S21100NR1 RF Power Field Effect Transistor
Subcategory: RF Power

MRF6S21100NR1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MRF6S21100NR1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MRF6S21100NR1 Features

  • RF Power Field Effect Transistor
  • LDMOS technology for high frequency
  • 28V operating voltage
  • 1.05A continuous current
  • 2.11GHz to 2.17GHz frequency range

MRF6S21100NR1 Applications

  • W-CDMA base station applications
  • TDMA and CDMA amplifiers
  • PCN-PCS cellular radio
  • WLL and TD-SCDMA systems

MRF6S21100NR1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage for the MRF6S21100NR1?

The operating voltage is 28V.

What is the continuous current rating for the MRF6S21100NR1?

The continuous current rating is 1.05 A.

What is the power output of the MRF6S21100NR1?

The power output is 23W.

What is the frequency range for the MRF6S21100NR1?

The frequency range is 2.11GHz to 2.17GHz.

What package type is the MRF6S21100NR1 supplied in?

It is supplied in a TO-270AB package.

What is the RoHS status of the MRF6S21100NR1?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the MRF6S21100NR1?

The Moisture Sensitivity Level is 1 Unlimited.

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