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3,566 pcs
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3566 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Freescale Semiconductor MRF6S21100NR1 is an N-Channel enhancement-mode lateral MOSFET designed for RF power applications. It is suitable for TDMA, CDMA, and multicarrier amplifier applications, specifically for Class AB amplifiers in PCN-PCS, cellular radio, WLL, and TD-SCDMA systems.
This RF MOSFET operates within a frequency range of 2.11GHz to 2.17GHz, with a voltage rating of 28V and a continuous current of 1.05A. It delivers a power output of 23W and features a gain of 14.5dB. The technology used is LDMOS, known for its high-frequency performance.
The MRF6S21100NR1 comes in a TO-270AB package, designed for surface mounting. Its compact dimensions and surface mount capability make it suitable for integration into various RF circuit designs where space is a consideration.
This component is classified under Transistors - FETs, MOSFETs - RF. It is designed for applications requiring robust RF power amplification within the specified frequency bands.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 28V.
The continuous current rating is 1.05 A.
The power output is 23W.
The frequency range is 2.11GHz to 2.17GHz.
It is supplied in a TO-270AB package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.