| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,750 pcs
|
5750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The MRF6S21050LR3 from NXP Semiconductors is a high-performance RF Power MOSFET designed for demanding applications such as W-CDMA base stations. It utilizes LDMOS technology and is suitable for TDMA, CDMA, and multicarrier amplifier applications, operating in Class AB.
Key electrical characteristics include a typical power gain of 16 dB and a drain efficiency of 27.7%. The device is designed for operation at 28 VDD, with a maximum qualified VDD of 32 V. It can handle significant power, with a typical average output power of 11.5 Watts at 2157 MHz and is capable of handling 50 Watts CW output power at 2140 MHz with a 10:1 VSWR.
This MOSFET features integrated ESD protection and is internally matched for ease of use. It is supplied in the NI-400 package, suitable for chassis mounting. The device is RoHS3 compliant and offered in tape and reel packaging.
Applications include PCN, PCS/cellular radio, and WLL systems requiring robust RF power amplification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical operating voltage is 28 V, with a maximum qualified VDD of 32 Vdc.
The device is supplied in the NI-400 package.
The RoHS status is RoHS3 Compliant.
The typical power gain is 16 dB.
The typical average output power is 11.5 Watts.
The device is designed for applications with frequencies from 2110 to 2170 MHz, with a typical operating frequency of 2.16 GHz.