| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,690 pcs
|
2690 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Frequency | |
| Gain | |
| Mounting Type | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| VSWR | |
| Voltage |
The NXP Semiconductors MRF6S20010NR1 is a lateral N-channel enhancement-mode MOSFET designed for general-purpose applications in the 1600 to 2200 MHz frequency range. It is suitable for Class A or Class AB amplifiers, supporting analog and digital modulation.
Key electrical specifications include a typical power output of 10 Watts PEP at 2170 MHz with 28V drain-source voltage and 130 mA quiescent current. Typical power gain is 15.5 dB with 36% drain efficiency. The device is characterized with series equivalent large-signal impedance parameters and is internally matched for ease of use.
This MOSFET is qualified for up to 32V drain-source operation and features integrated ESD protection. It is housed in a 225°C capable plastic package, specifically the TO-270-2, and is available in tape and reel packaging.
Applications include multipurpose amplifier designs requiring robust RF performance. The device is capable of handling 5:1 VSWR at 28 Vdc, 2000 MHz, and 10 Watts CW output power.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical power output is 10 Watts PEP at 2170 MHz.
This RF MOSFET is designed for frequencies from 1600 to 2200 MHz.
The typical operating voltage is 28 V.
The package type is TO-270-2.
The maximum operating junction temperature is 225 °C.