| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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120 pcs
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120 pcs | On Request | 1 | On Request | On Request | 1133 | On Request | On Request |
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| Tape & Reel |
The MRF6S19100NR1 is an RF FET manufactured by Freescale Semiconductor, designed for N-CDMA base station applications operating within the 1930 to 1990 MHz frequency range. This component is also suitable for TDMA, CDMA, and multicarrier amplifier applications, and can be used in Class AB amplifiers for PCN-PCS/cellular radio and WLL applications.
Key electrical characteristics include a breakdown voltage of 68V and an operating frequency of 1.99GHz. Performance under typical conditions (VDD = 28 Volts, IDQ = 950 mA, Pout = 22 Watts Avg., f = 1987 MHz) shows a power gain of 14.5 dB and a drain efficiency of 25.5%. It also exhibits an IM3 of -37 dBc and an ACPR of -51 dBc.
This RF FET is capable of handling a 5:1 VSWR at 28 Vdc and 1960 MHz with 100 Watts CW output power. It is qualified for up to a maximum of 32 VDD operation and features integrated ESD protection. The component is housed in a TO270-4 package and is available in tape and reel, with 500 units per reel.
The MRF6S19100NR1 is designed for lower memory effects and wide instantaneous bandwidth applications. It is RoHS compliant and has an MSL rating of 1.
The maximum operating voltage (VDD) is 32 V. Typical operation is at 28 V.
The MRF6S19100NR1 is packaged in a TO270-4 case.
The maximum junction temperature is 225°C.
The operating frequency is 1.99 GHz.
The device can deliver 100 Watts CW output power at 28 V and 1960 MHz.
The typical power gain is 14.5 dB at VDD=28V, IDQ=950 mA, Pout=22W Avg., f=1987 MHz.
The typical drain efficiency is 25.5% at VDD=28V, IDQ=950 mA, Pout=22W Avg., f=1987 MHz.