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MRF6S19100NBR1 The Freescale Semiconductor MRF6S19100NBR1 is an RF Power N-Channel MOSFET designed for CDMA base station applications. It offers 22W of power at 1.99GHz.
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MRF6S19100NBR1

Available from 1 distributors
Mfr Name: Freescale Semiconductor
Freescale Semiconductor
The Freescale Semiconductor MRF6S19100NBR1 is an RF Power N-Channel MOSFET designed for CDMA base station applications. It offers 22W of power at 1.99GHz.
✓ Total Stock: 45 pcs
$ Price Range: $0.99

MRF6S19100NBR1 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Speed Components Ltd ✓
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45 pcs
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45 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

MRF6S19100NBR1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Frequency
Gain
Mounting Type
Power
Supplier Device Package
Supplier Package
Technology
Voltage
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MRF6S19100NBR1 Description

Short technical summary and product information.

The MRF6S19100NBR1 from Freescale Semiconductor is an RF Power N-Channel MOSFET utilizing LDMOS technology. It is designed for N-CDMA base station applications and is suitable for TDMA, CDMA, and multicarrier amplifier applications.

 

This MOSFET operates at frequencies up to 1.99GHz and can handle 22W of power. It features a continuous current rating of 950mA and a voltage rating of 28V. The gain is specified at 14.5dB.

 

The component is available in a TO-272BB package and is designed for chassis mounting. It is RoHS3 Compliant and has a Moisture Sensitivity Level (MSL) of 1.

 

This device is intended for use in Class AB amplifiers for PCN-PCS and cellular radio applications.

MRF6S19100NBR1 Quick Information

Product Type: RF MOSFET
Canonical Name: MRF6S19100NBR1 RF Power Field Effect Transistor
Subcategory: RF Power MOSFET

MRF6S19100NBR1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MRF6S19100NBR1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MRF6S19100NBR1 Features

  • LDMOS RF Power MOSFET technology.
  • Designed for CDMA base station applications.
  • 22W power output at 1.99GHz.
  • 950mA continuous current rating.
  • RoHS3 Compliant.

MRF6S19100NBR1 Applications

  • Suitable for TDMA amplifiers.
  • Used in CDMA amplifier circuits.
  • Ideal for multicarrier amplifiers.
  • Designed for PCN-PCS applications.
  • Applicable in cellular radio systems.

MRF6S19100NBR1 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the power output of the MRF6S19100NBR1?

The MRF6S19100NBR1 has a power output of 22W.

What is the operating frequency of the MRF6S19100NBR1?

The MRF6S19100NBR1 operates at a frequency of 1.99GHz.

What is the current rating for the MRF6S19100NBR1?

The MRF6S19100NBR1 has a continuous current rating of 950mA.

What is the voltage rating of the MRF6S19100NBR1?

The MRF6S19100NBR1 is rated for 28V.

What is the package type for the MRF6S19100NBR1?

The MRF6S19100NBR1 is supplied in a TO-272BB package.

How is the MRF6S19100NBR1 mounted?

The MRF6S19100NBR1 is designed for chassis mounting.

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