| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gain | |
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| Tape & Reel | |
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The MRF6S18100NR1 is a high-performance RF Power Field Effect Transistor from NXP Semiconductors, utilizing LDMOS technology. It is specifically designed for GSM and GSM EDGE base station applications, operating within the 1800 to 2000 MHz frequency range. This device is suitable for TDMA, CDMA, and multicarrier amplifier applications.
Key electrical characteristics include a typical output power of 100 Watts at 1.99 GHz with a power gain of 14.5 dB and a drain efficiency of 49% for GSM applications. For GSM EDGE, it provides 40 Watts average power with a 15 dB power gain and 35% drain efficiency across the 1805-1880 MHz or 1930-1990 MHz bands. The transistor is capable of handling a 5:1 VSWR at 28 Vdc and 100 Watts CW.
This MOSFET features internally matched circuitry for ease of use and integrated ESD protection. It is qualified for operation up to a maximum of 32 VDD. The device comes in a 225°C capable plastic package, specifically the TO-270AB, designed for surface mounting. It is also RoHS compliant and available in tape and reel packaging.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical output power for the MRF6S18100NR1 in GSM applications is 100 Watts at 1990 MHz.
The operating frequency range for GSM EDGE applications is 1805-1880 MHz or 1930-1990 MHz.
The typical power gain in GSM EDGE applications is 15 dB.
The maximum operating junction temperature is 225 °C.
The MRF6S18100NR1 is supplied in a TO-270AB package.