| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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296 pcs
|
296 pcs | On Request | 1 | On Request | On Request | 0943+ | On Request | On Request | |
|
20 pcs
|
20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MRF6S18100NBR1 from Freescale Semiconductor is an RF MOSFET designed for high-frequency applications. It employs LDMOS technology, offering robust performance characteristics.
Key electrical specifications include an output power of 100W and a test voltage of 28V. The device operates at a frequency of 1.99GHz, with a gain of 14.5dB. The current rating is 900 mA.
This component is housed in a TO-272BB package, with the supplier device package specified as TO-272 WB-4. Its rated voltage is 68V.
The MRF6S18100NBR1 is suitable for various RF applications requiring reliable power amplification and signal handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The output power is 100W.
The operating frequency is 1.99GHz.
The test voltage is 28V.
The MRF6S18100NBR1 is supplied in a TO-272BB package.
The rated voltage is 68V.