MRF6S18060NR1

The MRF6S18060NR1 is a high-performance N-Channel enhancement-mode lateral MOSFET from NXP Semiconductors, specifically engineered for GSM and GSM EDGE base station applications operating between 1800 to 2000 MHz. It is also suitable for TDMA, CDMA, and multicarrier amplifier applications.

This RF power transistor is characterized by its internal matching for ease of use and is qualified for up to 32 VDD operation. Key electrical specifications include a typical power output of 60 Watts CW at 1990 MHz with a power gain of 15 dB and 50% drain efficiency. For GSM EDGE applications, it provides 25 Watts Avg. power with a gain of 15.5 dB, spectral regrowth of -62 dBc at 400 kHz offset, and EVM of 2% rms.

The device is capable of handling a 5:1 VSWR under specific operating conditions. It features integrated ESD protection and is housed in a 225°C capable plastic package, specifically the TO-270WB-4 style. The 'N' suffix indicates lead-free terminations, and the 'R1' suffix signifies 500 units per 13-inch reel.

Designed for surface mounting, the MRF6S18060NR1 offers robust performance for demanding RF power applications in telecommunications infrastructure.