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MRF5S19060NBR1 The Freescale Semiconductor MRF5S19060NBR1 is an RF Power Field Effect Transistor utilizing LDMOS technology. It offers 12W of power and operates at frequencies up to 1.99GHz.
Mfr Part #:

MRF5S19060NBR1

Available from 2 distributors
Mfr Name: Freescale Semiconductor
Freescale Semiconductor
The Freescale Semiconductor MRF5S19060NBR1 is an RF Power Field Effect Transistor utilizing LDMOS technology. It offers 12W of power and operates at frequencies up to 1.99GHz.
✓ Total Stock: 919 pcs
$ Price Range: $0.99

MRF5S19060NBR1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
897 pcs
On Request
897 pcs On Request 1 On Request On Request 1004+ On Request On Request
Speed Components Ltd ✓
Non-Authorised Inventory information
22 pcs
On Request
22 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

MRF5S19060NBR1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Frequency
Gain
Power
Storage Temperature
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MRF5S19060NBR1 Description

Short technical summary and product information.

The MRF5S19060NBR1 from Freescale Semiconductor is an RF Power Field Effect Transistor designed for high-frequency applications. It employs LDMOS technology, providing a power output of 12W and operating at a voltage of 28V.

 

This transistor is specified for a frequency of 1.99GHz and offers a gain of 14dB. The component is housed in a TO-272BB package, with the supplier device package identified as TO-272 WB-4. Its current rating is 750 mA.

 

The MRF5S19060NBR1 is described as RoHS3 Compliant, with an MSL rating of 1 Unlimited and REACH Unaffected status. These compliance details are based on available data and should be verified for specific applications.

MRF5S19060NBR1 Quick Information

Product Type: RF Power Field Effect Transistor
Canonical Name: MRF5S19060NBR1 RF Power Field Effect Transistor
Subcategory: RF Power Field Effect Transistors

MRF5S19060NBR1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MRF5S19060NBR1 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MRF5S19060NBR1 Features

  • LDMOS RF Power Field Effect Transistor.
  • 12W power output capability.
  • Operates at 28V supply voltage.
  • 1.99GHz operating frequency.
  • TO-272BB package for RF applications.

MRF5S19060NBR1 Applications

  • Suitable for RF power amplification.
  • Designed for L-Band applications.
  • Used in high-frequency circuits.
  • Component for communication systems.

MRF5S19060NBR1 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the power output of the MRF5S19060NBR1?

The MRF5S19060NBR1 has a power output of 12W.

What is the operating voltage for the MRF5S19060NBR1?

The operating voltage for the MRF5S19060NBR1 is 28V.

At what frequency does the MRF5S19060NBR1 operate?

The MRF5S19060NBR1 operates at a frequency of 1.99GHz.

What technology does the MRF5S19060NBR1 use?

The MRF5S19060NBR1 uses LDMOS technology.

What is the package type for the MRF5S19060NBR1?

The package type for the MRF5S19060NBR1 is TO-272BB.

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