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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | 0349TP | On Request | On Request |
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The MRF587 is an NPN Silicon High Frequency Transistor designed for high-gain, low-noise, and ultra-linear applications. It is ideal for use in tuned and wide-band amplifiers, particularly in CATV, MATV, and instrumentation.
Key electrical characteristics include a typical noise figure of 3.0 dB at 500 MHz with a 90 mA collector current, and a maximum power gain of 16.5 dB at 500 MHz. The transistor also boasts a high transition frequency (fT) of 5.5 GHz and low intermodulation distortion.
This component features an ion-implanted all-gold metal system and nichrome emitter ballast resistors for enhanced performance and reliability. It is housed in a 244A-01 case style, designed for surface mount applications.
The MRF587 is suitable for demanding RF applications requiring precise signal amplification and low noise performance.
The typical noise figure for the MRF587 transistor is 3.0 dB at 500 MHz with a collector current of 90 mA.
The maximum power gain of the MRF587 transistor is 16.5 dB at 500 MHz.
The transition frequency (fT) of the MRF587 is 5.5 GHz.
The RoHS status of the MRF587 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MRF587 is 1 Unlimited.
The REACH status for the MRF587 is REACH Unaffected.