| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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102 pcs
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102 pcs | On Request | 1 | On Request | On Request | 9823 | On Request | On Request |
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The MRF587 is an NPN Silicon High Frequency Transistor manufactured by Motorola Semiconductor. It is designed for high-gain, low-noise, ultra-linear, tuned, and wide-band amplifier applications.
Key electrical characteristics include a typical noise figure of 3.0 dB at 500 MHz with an IC of 90 mA, and a typical maximum power gain of 16.5 dB at 500 MHz. The transistor also features a high transition frequency (fT) of 5.5 GHz and low intermodulation distortion.
This component is ideal for use in CATV, MATV, and instrumentation applications. It utilizes an ion-implanted, all-gold metal system and includes nichrome emitter ballast resistors for enhanced performance and reliability. The transistor is supplied in Case 244A-01, Style 1.
Additional specifications include a typical intermodulation distortion of -70 dB (TB3) and a DIN of 125 dB µV.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical noise figure for the MRF587 transistor is 3.0 dB at 500 MHz with an IC of 90 mA.
The typical maximum power gain of the MRF587 transistor is 16.5 dB at 500 MHz.
The transition frequency (fT) of the MRF587 transistor is 5.5 GHz.
The MRF587 transistor is designed for use in high-gain, low-noise, ultra-linear, tuned, and wide-band amplifiers, making it ideal for CATV, MATV, and instrumentation applications.
The MRF587 transistor is supplied in Case 244A-01, Style 1.