| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,750 pcs
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5750 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MACOM Technology Solutions MRF587 is an RF NPN silicon high-frequency transistor. It is designed for use in high-gain, low-noise, ultra-linear, tuned, and wide-band amplifiers. Ideal applications include CATV, MATV, and instrumentation.
Key electrical specifications include a typical noise figure of 3.0 dB at 500 MHz and 90 mA, a maximum power gain of 16.5 dB at 500 MHz, and a transition frequency (fT) of 5.5 GHz. The transistor operates at a voltage of 17V and a current of 200mA, with a DC current gain (hFE) of 50 minimum at 50mA and 5V. It also offers low intermodulation distortion.
This device features an all-gold metal system and ion implantation. It is housed in a 244A-01 package with stud mount type and operates at temperatures up to 200°C.
The MRF587 is suitable for applications requiring high performance in RF amplification circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical noise figure is 3.0 dB at 500 MHz and 90 mA.
The transition frequency is 5.5 GHz.
The operating voltage is 17V.
The current rating is 200mA.
The MRF587 is an NPN silicon high-frequency transistor.
The MRF587 is supplied in the 244A-01 package, style 1, with stud mount.
The operating temperature is up to 200°C.