| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,600 pcs
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3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MRF586 is a silicon NPN transistor from Microsemi Corporation, designed for VHF and UHF equipment applications. It is suitable for amplifier, pre-driver, driver, and output stages, as well as oscillator and frequency-multiplier functions.
Key electrical specifications include a collector-emitter voltage of 17V, a maximum collector current of 200mA, and a maximum power dissipation of 1W. The transistor operates at frequencies up to 3GHz, with a typical fT of 3.0 GHz at 300MHz, 14V, 90mA. It also features a typical maximum unilateral gain (GU max) of 12.5dB and a typical insertion gain (|S21|2) of 11.5dB at 300 MHz, 15V, 40mA.
Packaged in a TO-39 metal can, the MRF586 is designed for through-hole mounting. Its static characteristics include a minimum DC current gain (hFE) of 40 at 50mA and 5V. The absolute maximum ratings specify a collector-base voltage of 35V and an emitter-base voltage of 3.0V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MRF586 is 17V.
The MRF586 transistor has a maximum collector current (IC) of 200mA.
The MRF586 operates at a maximum frequency of 3GHz.
The MRF586 is supplied in a TO-39 metal can package.
The MRF586 transistor is designed for through-hole mounting.
The typical maximum unilateral gain (GU max) for the MRF586 is 12.5dB at 300 MHz, 15V, 40mA.
The typical insertion gain (|S21|2) for the MRF586 is 11.5dB at 300 MHz, 15V, 40mA.