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MRF5812

The Motorola MRF5812 is an NPN silicon RF transistor designed for low power amplifiers up to 1.0 GHz. It offers low noise and high gain characteristics.

✓ Total Stock: 411 pcs

$ Price Range: $0.99

MRF5812 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	237 pcs On Request	237 pcs	On Request	1	On Request	On Request	95+	On Request	On Request
Fe Components ✓ Non-Authorised Inventory information	161 pcs On Request	161 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Partservice ✓ Non-Authorised Inventory information	13 pcs On Request	13 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

MRF5812 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Motorola Semicondutor
Frequency	1.0 GHz
Noise Figure	2.0 dB
Storage Temperature	°C ~ °C
Tape & Reel	Yes
Thermal Resistance	45 °C/W

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MRF5812 Description

Short technical summary and product information.

The Motorola MRF5812 is an NPN silicon RF transistor engineered for high current, low power amplifier applications up to 1.0 GHz. This device features state-of-the-art fine line geometry and arsenic emitters, contributing to its excellent performance characteristics.

Key electrical specifications include a typical noise figure of 2.0 dB at 500 MHz, low intermodulation distortion, and high gain. The transistor is fully characterized and offers a high current-gain bandwidth product. It operates with a maximum collector-emitter voltage of 15 Vdc and a continuous collector current of 200 mAdc.

The MRF5812 is available in tape and reel packaging, with options for 500 units per reel (R1 suffix) or 2,500 units per reel (R2 suffix). It is housed in a SORF (SO-8) package (Case 751-06, Style 1) or a different package (Case 317-01, Style 2).

This transistor is suitable for applications requiring excellent dynamic range and reliable performance in RF circuits.

MRF5812 Quick Information

Product Type: RF Transistor

Canonical Name: MRF5812 NPN Silicon RF Transistor

Subcategory: RF Transistor

MRF5812 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

MRF5812 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MRF5812 Features

Low noise figure of 2.0 dB at 500 MHz.
Designed for amplifiers up to 1.0 GHz.
High current-gain bandwidth product.
Available in tape and reel packaging.
Low intermodulation distortion.

MRF5812 Applications

Suitable for high-frequency RF amplifiers.
Used in low-noise RF receiver circuits.
Ideal for high-current RF switching applications.
Applicable in microwave communication systems.
Designed for high-speed RF signal processing.

MRF5812 FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage for the MRF5812?

The maximum collector-emitter voltage (VCEO) for the MRF5812 is 15 Vdc.

What is the continuous collector current rating for the MRF5812?

The continuous collector current (IC) for the MRF5812 is 200 mAdc.

What is the typical noise figure of the MRF5812 at 500 MHz?

The typical noise figure for the MRF5812 at 500 MHz is 2.0 dB.

What is the maximum operating frequency for the MRF5812?

The MRF5812 is designed for applications up to 1.0 GHz.

What are the available packaging options for the MRF5812?

The MRF5812 is available in tape and reel packaging, with options for 500 units per reel (R1 suffix) or 2,500 units per reel (R2 suffix).