| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,569 pcs
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3569 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The MRF5812 is an NPN silicon RF transistor manufactured by Microsemi Corporation. It is designed for high current, low power amplifiers operating up to 1.0 GHz. Key electrical characteristics include a collector-emitter voltage of 15V and a continuous collector current of 200mA.
This device features low noise (2.0 dB @ 500 MHz), low intermodulation distortion, and high gain, making it suitable for demanding RF applications. The transistor operates at frequencies up to 5GHz and provides a gain of 13dB to 15.5dB.
The MRF5812 is available in an 8-SOIC surface mount package. It is designed with fine line geometry, arsenic emitters, gold top metallization, and nichrome thin-film ballasting resistors for reliable performance. The datasheet indicates tape and reel packaging options are available with specific suffixes for different quantities.
With its robust specifications and construction, the MRF5812 is a capable component for various RF circuit designs requiring amplification and signal processing at high frequencies.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MRF5812 is 15 Vdc.
The MRF5812 has a continuous collector current (IC) rating of 200 mAdc.
The MRF5812 transistor is designed for operation up to 5 GHz.
The typical noise figure for the MRF5812 is between 2 dB and 3 dB at 500 MHz.
The MRF5812 is supplied in an 8-SOIC package.
The MRF5812 is a surface mount device.