MRF5812 The MRF5812 is an NPN RF bipolar junction transistor from Microsemi Corporation designed for high-frequency applications. It offers a 15V collector-emitter voltage and 200mA continuous collector current.
Mfr Part #:

MRF5812

Available from 1 distributors
Mfr Name: Microsemi Corporation
Microsemi Corporation
The MRF5812 is an NPN RF bipolar junction transistor from Microsemi Corporation designed for high-frequency applications. It offers a 15V collector-emitter voltage and 200mA continuous collector current.
✓ Total Stock: 3,569 pcs
$ Price Range: $0.99

MRF5812 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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3,569 pcs
3569 pcs On Request 1 On Request On Request On Request On Request On Request

MRF5812 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Gain
Lead Spacing
Mounting Type
Noise Figure (dB Typ @ f)
Power
Supplier Device Package
Tape & Reel
Thermal Resistance
Transistor Type
Voltage

MRF5812 Description

Short technical summary and product information.

The MRF5812 is an NPN silicon RF transistor manufactured by Microsemi Corporation. It is designed for high current, low power amplifiers operating up to 1.0 GHz. Key electrical characteristics include a collector-emitter voltage of 15V and a continuous collector current of 200mA.

 

This device features low noise (2.0 dB @ 500 MHz), low intermodulation distortion, and high gain, making it suitable for demanding RF applications. The transistor operates at frequencies up to 5GHz and provides a gain of 13dB to 15.5dB.

 

The MRF5812 is available in an 8-SOIC surface mount package. It is designed with fine line geometry, arsenic emitters, gold top metallization, and nichrome thin-film ballasting resistors for reliable performance. The datasheet indicates tape and reel packaging options are available with specific suffixes for different quantities.

 

With its robust specifications and construction, the MRF5812 is a capable component for various RF circuit designs requiring amplification and signal processing at high frequencies.

MRF5812 Quick Information

Product Type: RF Transistor
Canonical Name: MRF5812 NPN RF Transistor
Subcategory: RF Transistor

MRF5812 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MRF5812 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MRF5812 Features

  • NPN RF transistor for high frequencies.
  • 15V collector-emitter voltage rating.
  • 200mA continuous collector current.
  • Operates up to 5GHz frequency.
  • Surface mount 8-SOIC package.

MRF5812 Applications

  • Used in RF amplification circuits
  • Suitable for high-frequency communication devices
  • Ideal for compact RF module designs
  • Applicable in wireless transceiver systems

MRF5812 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MRF5812?

The maximum collector-emitter voltage (VCEO) for the MRF5812 is 15 Vdc.

What is the continuous collector current rating of the MRF5812?

The MRF5812 has a continuous collector current (IC) rating of 200 mAdc.

What is the maximum operating frequency of the MRF5812 transistor?

The MRF5812 transistor is designed for operation up to 5 GHz.

What is the typical noise figure for the MRF5812 at 500 MHz?

The typical noise figure for the MRF5812 is between 2 dB and 3 dB at 500 MHz.

What is the package type for the MRF5812?

The MRF5812 is supplied in an 8-SOIC package.

How is the MRF5812 mounted?

The MRF5812 is a surface mount device.

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