| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,568 pcs
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2568 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MRF581 from Microsemi Corporation is an NPN bipolar junction transistor (BJT) specifically designed for RF applications. It features a maximum operating voltage of 18V and can handle a collector current of up to 200mA. With a frequency capability of 5GHz, this transistor is suitable for various high-frequency circuits.
Key electrical characteristics include a typical gain of 13dB to 15.5dB and a noise figure of 3dB to 3.5dB at 500MHz. The DC current gain (hFE) is a minimum of 50 at 50mA and 5V. The transistor dissipates up to 1.25W of power and operates at junction temperatures up to 150°C.
Packaged in a surface-mount Micro-X ceramic (84C) case, the MRF581 is designed for ease of integration into compact electronic assemblies. Its RoHS3 compliant status and Moisture Sensitivity Level (MSL) 1 rating further support its use in various manufacturing environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum operating voltage for the MRF581 is 18V.
The MRF581 transistor can operate at a maximum junction temperature of 150°C.
The MRF581 is supplied in a Micro-X ceramic (84C) package.
The MRF581 RF transistor operates at frequencies up to 5GHz.
The MRF581 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MRF581 is 1 Unlimited.