| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,513 pcs
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1513 pcs | On Request | 1 | On Request | On Request | 21 | On Request | On Request |
| Category | |
| Manufacturer Name |
The MRF5711LT1 is a high-frequency RF transistor manufactured by ON Semiconductor. It is designed for applications requiring low noise and wide dynamic range, such as front-end amplifiers and low-noise VCOs.
Key electrical characteristics include a typical gain-bandwidth product of 8.0 GHz at 50 mA and a low noise figure of 1.6 dB at 1.0 GHz. The device also offers a typical high gain of 17 dB at 30 mA/500 MHz and a matched power gain of 13.5 dB. It operates with a maximum collector current of 80 mA and a collector-emitter voltage of up to 10 Vdc.
This transistor is available in a surface-mountable SOT-23 plastic package, making it suitable for automated assembly processes. The standard package quantity is 3,000 units per reel, indicated by the 'T1' suffix.
Designed with state-of-the-art technology, including fine line geometry, ion-implanted arsenic emitters, gold top metallization, and silicon nitride passivation, the MRF5711LT1 offers superior quality and performance at a low cost.
| Qty | Low | High |
|---|---|---|
| 1+ | $8.20 | $8.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical gain-bandwidth product is 8.0 GHz at 50 mA.
The typical minimum noise figure is 1.6 dB at 1.0 GHz.
The maximum continuous collector current is 80 mA.
The MRF5711LT1 is available in a SOT-23 package.
The standard package quantity is 3,000 units per reel.
The operating and storage temperature range is -55 to +150 °C.