| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MRF557 is an RF Bipolar Power Transistor manufactured by Motorola Semiconductor. This NPN silicon transistor is designed for RF applications and operates within a frequency range of up to 800 MHz. It features a maximum collector-emitter voltage (VCEO Max) of 16V and a continuous collector current (Ic) of 400 mA. The minimum DC collector/base gain (hFE Min) is 90, and it has a power dissipation (Pd) of 3W.
This component is suitable for amplifier applications and operates across a wide temperature range, from -55 C to +150 C. The MRF557 is mounted using SMD/SMT technology and comes in a Case 317D-02 package, described as a PLASTIC, M234, POWER MACRO PACKAGE-4, with a PLASTIC/EPOXY body material and a DISK BUTTON package style. It is supplied in a Tray packaging.
Key electrical characteristics include a maximum collector-base capacitance of 5.5 pF and a maximum collector current (IC) of 0.5000 A. The transistor is built with silicon as the element material and has a single configuration.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO Max) for the MRF557 is 16V.
The MRF557 has a continuous collector current of 400 mA.
The minimum DC collector/base gain (hFE Min) for the MRF557 is 90.
The power dissipation (Pd) for the MRF557 is 3 W.
The MRF557 operates at a frequency of 800 MHz.
The MRF557 can operate between -55 C and +150 C.
The MRF557 is an NPN Silicon RF Bipolar Power Transistor.