| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000 pcs
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2000 pcs | On Request | 1 | On Request | On Request | 0003- | On Request | On Request |
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The MRF553 is a high-performance RF bipolar transistor from Motorola Semiconductor, specifically designed for wideband large signal applications within the VHF frequency range.
This transistor is specified for operation at 12.5 V and 175 MHz, delivering a minimum output power of 1.5 W with a minimum gain of 11.5 dB. It exhibits a typical collector efficiency of 60%, making it a cost-effective solution for RF power stages.
The MRF553 features a Power Macro package with electroless tin-plated leads for enhanced solderability. Its absolute maximum ratings include a collector-emitter voltage of 16 Vdc and a collector current of 500 mA.
Key electrical specifications include a DC current gain (HFE) ranging from 30 to 200, and an output capacitance (COB) of 12 pF typical. The device is designed to withstand load mismatches with no degradation in output power.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MRF553 transistor has a minimum output power of 1.5 W.
The MRF553 RF transistor has a minimum power gain of 11.5 dB.
The MRF553 has a typical collector efficiency of 60%.
The specified characteristics for the MRF553, including output power and gain, are at 175 MHz.
The DC Current Gain (HFE) for the MRF553 ranges from 30 to 200.
The MRF553 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MRF553 is 1 Unlimited.