| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,745 pcs
|
8745 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Automotive Grade | |
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| Military Grade | |
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| Voltage |
The MRF374A from NXP Semiconductors is a high-performance RF Power Field-Effect Transistor designed for broadband applications within the 470 to 860 MHz frequency range. This N-Channel Enhancement-Mode Lateral MOSFET is ideal for large-signal, common-source amplifier applications in 28/32 volt transmitter equipment.
Key electrical characteristics include a typical output power of 130 Watts PEP at 860 MHz with 32 Volts, and a power gain of 17.3 dB. The device also exhibits a typical drain efficiency of 41.2% and is capable of handling a 10:1 VSWR at 32 Vdc, 857 MHz, and 130 Watts CW output power. It features integrated ESD protection and excellent thermal stability.
Packaged in a NI-650 case with chassis mount type, the MRF374A is suitable for demanding RF power applications. Its robust design and characterized large-signal impedance parameters make it a reliable choice for broadband commercial and industrial RF transmitters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical output power of the MRF374A is 130 Watts PEP.
The typical power gain for the MRF374A is 17.3 dB.
The MRF374A is designed for frequencies from 470 to 860 MHz.
The typical drain efficiency is 41.2%.
The typical operating voltage is 32 Vdc.
The MRF374A is supplied in the NI-650 package.
The MRF374A is a chassis mount device.