| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Efficiency | |
| Frequency | |
| Gain | |
| Input Capacitance | |
| Mounting Type | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| VSWR | |
| Voltage |
The MRF373ALR1 is a lateral N-channel enhancement-mode RF Power MOSFET manufactured by NXP Semiconductors. Designed for broadband commercial and industrial applications, it operates within frequencies from 470 to 860 MHz.
This device is ideal for large-signal, common source amplifier applications in 28/32 volt transmitter equipment. It delivers a typical output power of 75 Watts with a power gain of 18.2 dB and an efficiency of 60% at 860 MHz and 32 Volts. The MRF373ALR1 is capable of handling a 10:1 VSWR under specified output conditions.
Key features include integrated ESD protection and excellent thermal stability. The MOSFET is characterized with series equivalent large-signal impedance parameters. It comes in a NI-360 package suitable for chassis mounting and is supplied on tape and reel, with 500 units per reel.
This part is explicitly marked as 'NOT RECOMMENDED FOR NEW DESIGN' in its datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical CW output power at 860 MHz and 32 Volts is 75 Watts.
The typical power gain at 860 MHz and 32 Volts is 18.2 dB.
This RF MOSFET is designed for frequencies from 470 to 860 MHz.
The typical drain-source on-voltage at VGS = 10 V and ID = 3 A is 0.41 Vdc.
The MRF373ALR1 is supplied in a NI-360 package.
The product is listed as RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.