MRF321 The MRF321 is an NPN RF power transistor from MACOM Technology Solutions designed for driver and predriver amplifier stages. It offers 10W output power and 12dB minimum power gain.
Mfr Part #:

MRF321

Available from 1 distributors
Mfr Name: MACOM Technology Solutions
MACOM Technology Solutions
The MRF321 is an NPN RF power transistor from MACOM Technology Solutions designed for driver and predriver amplifier stages. It offers 10W output power and 12dB minimum power gain.
✓ Total Stock: 4,000 pcs
$ Price Range: $0.99

MRF321 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
4,000 pcs
4000 pcs On Request 1 On Request On Request On Request On Request On Request

MRF321 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Approval Agency
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Efficiency
Frequency Range
Gain
Mounting Type
Power
Supplier Device Package
Transistor Type
VSWR
Voltage

MRF321 Description

Short technical summary and product information.

The MACOM Technology Solutions MRF321 is an NPN silicon power transistor specifically designed for wideband large-signal driver and predriver amplifier stages within the 200-500 MHz frequency range. It guarantees performance at 400 MHz and 28 Vdc, delivering an output power of 10W with a minimum power gain of 12 dB and a minimum efficiency of 50%.

 

This transistor features a gold metallization system for high reliability and computer-controlled wirebonding for consistent input impedance. It is 100% tested for load mismatch at all phase angles with a 30:1 VSWR. The MRF321 is housed in a 244-04, STYLE 1 package suitable for chassis mounting.

 

Key electrical characteristics include a DC current gain (hFE) of 20 minimum at 500mA and 5V, and a continuous current rating of 1.1A. The transistor operates at a voltage of 33V.

MRF321 Quick Information

Product Type: RF Transistor
Canonical Name: MRF321 NPN RF Power Transistor
Subcategory: RF Bipolar Junction Transistor (BJT)

MRF321 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MRF321 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MRF321 Features

  • NPN silicon power transistor for RF applications.
  • 10W output power at 400MHz, 28Vdc.
  • Minimum power gain of 12dB.
  • High reliability gold metallization system.
  • Chassis mount 244-04, STYLE 1 package.

MRF321 Applications

  • Ideal for RF signal amplification
  • Used in communication transmitters
  • Suitable for RF circuit design
  • Supports high-frequency RF applications

MRF321 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the output power of the MRF321 transistor?

The MRF321 transistor has an output power of 10W.

What is the guaranteed performance frequency and voltage for the MRF321?

The MRF321 is guaranteed for performance at 400 MHz and 28 Vdc.

What is the minimum power gain of the MRF321 at 400 MHz?

The minimum power gain for the MRF321 at 400 MHz is 12 dB.

What type of transistor is the MRF321?

The MRF321 is an NPN silicon power transistor.

How is the MRF321 transistor mounted?

The MRF321 transistor is chassis mounted.

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