| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Efficiency | |
| Frequency | |
| Operating Voltage | |
| Output Power | |
| SVHC Present | |
| Style |
The MRF313 is an NPN Silicon High-Frequency Transistor designed for wideband amplifier, driver, or oscillator applications in military, mobile, and aircraft radio systems.
This transistor is specified for 28 V, 400 MHz characteristics, delivering an output power of 1.0 W with a minimum power gain of 15 dB and a typical efficiency of 45%. It features emitter ballast and low current density for improved Mean Time Between Failures (MTBF).
The MRF313 is housed in Case 305A-01, Style 1. Its common emitter configuration is designed for improved stability in RF applications.
This component is suitable for various RF applications requiring reliable amplification and oscillation.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MRF313 transistor has an output power of 1.0 W at 400 MHz.
The MRF313 transistor has a minimum power gain of 15 dB at 400 MHz.
The typical efficiency of the MRF313 transistor at 400 MHz is 45%.
The MRF313 transistor is specified for 28 V operation.
The MRF313 transistor is specified for 400 MHz.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.