| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| For Use With | |
| Frequency | |
| Medical Grade | |
| Mounting Type | |
| Operating Voltage | |
| Storage Temperature | |
| Supplied Contents | |
| Type |
The MRF300AN-230MHZ is a reference board from NXP Semiconductors for the MRF300AN RF power LDMOS transistor. It is designed to evaluate the transistor's performance at 230MHz under pulse conditions (100μs, 20% duty cycle). The board achieves typical output power of 330W with a power gain of 20.4dB and drain efficiency of 75.5% at 50V supply voltage. The transistor features high ruggedness, withstanding VSWR >65:1 at all phase angles. The board is suitable for applications in HF/VHF communications, industrial, scientific, and medical (ISM) equipment, and broadcast systems. The MRF300AN is housed in a TO-247-3 package and is mounted via through-hole on the board. The board is supplied as a bare board without the transistor, intended for use with the MRF300AN.
| Qty | Low | High |
|---|---|---|
| 1+ | $808.50 | $808.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
230MHz.
330W typical at 230MHz under pulse conditions (100μs, 20% duty cycle).
50V nominal.
20.4dB typical at 230MHz under pulse conditions.
Yes, RoHS3 compliant (unverified).
TO-247-3.
75.5% typical at 230MHz under pulse conditions.