| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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138 pcs
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138 pcs | On Request | 1 | On Request | On Request | 0316/0423 | On Request | On Request |
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The MRF284LS is a high-power RF transistor utilizing LDMOS technology, manufactured by Motorola Semiconductor. It is designed for amplified signal transmission in RF applications, operating effectively up to a frequency of 1.93 GHz.
Key electrical specifications include a rated voltage of 65V and a test voltage of 26V, with a test current of 25 mA. The device offers a nominal output power of 4 Watts and a gain of 12.5 dB. Its LDMOS structure ensures high linearity and efficiency, making it suitable for demanding RF stages.
This RF FET is supplied in a NI-200Z package and features a chassis mount type, which aids in stable heat dissipation. The part is suitable for applications requiring robust RF amplification in a compact form factor, such as base station amplifiers and RF transmitters.
While the product status is listed as obsolete, it remains suited for equipment requiring reliable RF amplification. Users should consider life-cycle management and potential future substitutions for new designs.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The test voltage is 26V and the maximum rated voltage is 65V.
The package is NI-200Z with chassis mount.
The maximum operating frequency is 1.93 GHz.
The nominal power output is 4 Watts.
The gain is 12.5 dB.
The transistor uses LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology.
The current at test is 25 mA.