| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Gain | |
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| Tape & Reel | |
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| Voltage |
The NXP Semiconductors MRF282ZR1 is a high-performance RF Power MOSFET utilizing LDMOS technology. Designed for applications up to 2600 MHz, it is suitable for Class A and Class AB base station amplifiers, including TDMA, CDMA, and multicarrier applications.
This device is specified for two-tone performance at 2000 MHz and 26 Volts, delivering 10 Watts PEP with a power gain of 10.5 dB and 28% efficiency. Single-tone performance at the same conditions yields 10 Watts CW with 9.5 dB gain and 35% efficiency. It is capable of handling a 10:1 VSWR at 26 Vdc, 2000 MHz, and 10 Watts CW output power.
Key electrical characteristics include a drain-source breakdown voltage of 65 Vdc, a gate threshold voltage typically 3 Vdc, and input/output capacitances of 15 pF and 8 pF respectively. The device operates at a voltage of 26 V and a current of 75 mA, with a frequency range up to 2 GHz.
Packaged in a NI-200Z case, the MRF282ZR1 is designed for chassis mounting. It features excellent thermal stability with a junction-to-case thermal resistance of 4.2 °C/W and a maximum operating junction temperature of 200 °C. The device is RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MRF282ZR1 has a maximum drain-source voltage of 65V.
The MRF282ZR1 is packaged in the NI-200Z chassis mount package.
The maximum operating junction temperature is 200°C.
RoHS compliance status is unverified.