| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,336 pcs
|
2336 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Frequency | |
| Gain | |
| Industrial Grade | |
| Input Capacitance | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Voltage |
The NXP Semiconductors MRF282SR1 is a high-performance RF Power Field Effect Transistor utilizing LDMOS technology. Designed for Class A and Class AB applications, it is suitable for PCN and PCS base station systems operating at frequencies up to 2600 MHz. This device is well-suited for FM, TDMA, CDMA, and multicarrier amplifier applications.
Key electrical specifications include a typical output power of 10 Watts CW and a power gain of 9.5 dB at 2000 MHz and 26 Volts. It is characterized with a typical input capacitance of 15 pF and output capacitance of 8.0 pF. The transistor features excellent thermal stability and is characterized with series equivalent large-signal impedance parameters.
The MRF282SR1 comes in a Chassis Mount NI-200S package. It is designed for robust performance, capable of handling a 10:1 VSWR at 26 Vdc, 2000 MHz, and 10 Watts CW output power. The device is RoHS3 compliant and available on tape and reel.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 65 Vdc.
The typical gate threshold voltage is 3.0 Vdc.
The typical input capacitance is 15 pF.
The case operating temperature is up to 150 °C.
The MRF282SR1 is available in the NI-200S package.
Yes, the MRF282SR1 is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.