| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,789 pcs
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2789 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
This MRF281ZR1 is a Radio Frequency Field-Effect Transistor (RF FET) manufactured by NXP Semiconductors. It is designed for RF applications, featuring a rated voltage of 65V and an operating frequency of 1.93GHz. The device delivers an output power of 4W and has a gain of 12.5dB.
Packaged in an NI-200Z case, this FET is suitable for chassis mounting. It operates with a test voltage of 26V and a test current of 25mA. The technology used is LDMOS, known for its performance in high-frequency applications.
The component is RoHS3 Compliant and has a Moisture Sensitivity Level (MSL) of 1 Unlimited. Its specifications make it suitable for various RF power amplification tasks in electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MRF281ZR1 has a rated voltage of 65V.
The MRF281ZR1 operates at a frequency of 1.93GHz.
The MRF281ZR1 has an output power of 4W.
The MRF281ZR1 has a gain of 12.5dB.
The MRF281ZR1 is supplied in the NI-200Z package.
The MRF281ZR1 is designed for chassis mount.