| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MRF281ZR1 is a high-performance N-Channel LDMOS RF Power MOSFET manufactured by NXP Semiconductors. Designed for digital and analog cellular PCN and PCS base station applications, it operates effectively in the frequency range of 1000 to 2500 MHz.
This device is characterized for operation in Class A and Class AB at 26 volts. Key electrical specifications include a drain-source breakdown voltage of 65V, a typical output power of 4 Watts PEP at 1930 MHz, and a power gain of 11 dB. It also features a typical efficiency of 30% and intermodulation distortion of -29 dBc.
The MRF281ZR1 is capable of handling a 10:1 VSWR at 26 Vdc, 2000 MHz, and 4 Watts CW output power. It is housed in a NI-200Z package and designed for chassis mounting, providing excellent thermal stability.
Additional electrical characteristics include input capacitance of 5.5 pF, output capacitance of 3.3 pF, and reverse transfer capacitance of 0.17 pF. The device operates with a gate threshold voltage typically around 3.2 Vdc and a gate quiescent voltage of 4.1 Vdc. Its maximum ratings include a drain-source voltage of 65Vdc and a storage temperature range of -65 to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MRF281ZR1 provides 4 Watts PEP output power at 1930 MHz.
The power gain of the MRF281ZR1 is 11 dB at 1930 MHz.
The MRF281ZR1 is designed for operation at 26 Volts.
The MRF281ZR1 is supplied in a NI-200Z package.
The MRF281ZR1 is designed for chassis mounting.
The MRF281ZR1 is RoHS3 Compliant.