| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,220 pcs
|
2220 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MRF24300NR3 from NXP Semiconductors is a high-power RF MOSFET designed for demanding applications. It employs LDMOS technology to deliver a significant output power of 330W at a frequency of 2.45GHz.
This component features a test voltage of 32V and a rated voltage of 65V, with a test current of 100 mA. It provides a gain of 13.1dB, making it suitable for various RF power amplification tasks.
The MRF24300NR3 is packaged in an OM-780-2 case and is designed for surface mount installation. Its robust specifications make it a reliable choice for RF power systems requiring high performance and efficiency.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MRF24300NR3 has an output power of 330W.
The operating frequency is 2.45GHz.
The test voltage is 32V.
The gain is 13.1dB.
It uses LDMOS technology.
The package is OM-780-2.
It is a surface mount device.