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397 pcs
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397 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MRF21060R3 from Freescale Semiconductor is an N-CHANNEL POWER MOSFET specifically designed for RF applications. This device features a technology based on LDMOS, enabling efficient performance in its intended frequency range.
Key electrical characteristics include an operating voltage of 28V and a power output of 60W. The transistor operates within a frequency range of 2.1GHz to 2.2GHz, with a gain of 12.5dB. It has a current rating of 500 mA and a specific current rating of 6µA.
The component is mounted via Chassis Mount and comes in a SOT-957A package, with a supplier device package identified as NI-780H-2L. Its RoHS status is listed as RoHS3 Compliant, and it has a Moisture Sensitivity Level (MSL) of 1 Unlimited. The REACH status is noted as REACH Unaffected.
This RF MOSFET is suitable for various high-frequency applications where robust power handling and specific gain characteristics are required. Its mounting type and package facilitate integration into systems requiring direct chassis mounting for thermal management.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MRF21060R3 operates at 28V.
The MRF21060R3 has a power rating of 60W.
The MRF21060R3 operates in the frequency range of 2.1GHz to 2.2GHz.
The MRF21060R3 is supplied in a SOT-957A package.
The MRF21060R3 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MRF21060R3 is 1 Unlimited.