| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,058 pcs
|
9058 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Tape & Reel |
The MRF21045LR3 from Freescale Semiconductor is a high-performance N-Channel enhancement-mode lateral MOSFET specifically designed for W-CDMA base station applications operating within the 2110 to 2170 MHz frequency range. It is also suitable for TDMA, CDMA, and multicarrier amplifier applications, particularly in Class AB configurations for PCN-PCS/cellular radio and WLL systems.
This RF power MOSFET boasts key electrical characteristics including a typical 2-carrier W-CDMA performance with 10 Watts average output power and 23.5% efficiency at 2157.5 MHz. It provides a typical gain of 15 dB and features excellent linearity with an IM3 of -37.5 dBc and ACPR of -41 dBc. The device is capable of handling a 5:1 VSWR at 28 Vdc and 45 Watts CW output power.
Designed for ease of use, the MRF21045LR3 is internally matched and features integrated ESD protection. It offers high gain, high efficiency, and high linearity, along with excellent thermal stability. The MOSFET is characterized with series equivalent large-signal impedance parameters. It comes in a Tape and Reel package, with the R3 suffix indicating 250 units per 32 mm, 13-inch reel. The leads have a nominal 40 μ″ gold plating thickness.
| Qty | Low | High |
|---|---|---|
| 1+ | $8.20 | $8.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MRF21045LR3 is designed for applications with frequencies from 2110 to 2170 MHz.
The typical average output power for the MRF21045LR3 is 10 Watts.
The MRF21045LR3 provides a typical gain of 15 dB.
The MRF21045LR3 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MRF21045LR3 is 1.
